Large-grain crystallized metal chalcogenide film, colloidal solution of amorphous particles, and preparation methods

ABSTRACT

The present invention relates to a method for preparing an aqueous or hydro-alcoholic colloidal solution of metal chalcogenide amorphous nanoparticles notably of the Cu 2 ZnSnS 4  (CZTS) type and to the obtained colloidal solution. 
     The present invention also relates to a method for manufacturing a film of large-grain crystallized semi-conducting metal chalcogenide film notably of CZTS obtained from an aqueous or hydro-alcoholic colloidal solution according to the invention, said film being useful as an absorption layer deposited on a substrate applied in a solid photovoltaic device.

The present invention relates to a method for making a film orcontinuous thin layer of crystallized metal chalcogenide with largegrains deposited on a substrate.

More particularly, the present invention relates to a solid photovoltaicdevice comprising a film or a so-called metal chalcogenide layer as anabsorption layer.

Still more particularly, a metal chalcogenide layer according to theinvention will be used as an absorption layer on a solid photovoltaicdevice, notably of the substrate type or of the superstrate typecomprising at least:

-   -   one optically transparent conductive layer, a so-called front        contact layer, for example of the TCO (transparent conductive        oxide) type, and    -   one insulating and transparent compound layer, for example a        layer of ZnO or ZnMg_(x)O_(1-x), and    -   one buffer layer of a type n semi-conductor, for example CdS or        In₂S₃ or Zn(S,O,OH), and    -   one so-called absorption layer of type p, and    -   one layer of conductive material, a so-called rear contact        layer, for example a metal layer of molybdenum (Mo), gold (Au),        graphite (C), Nickel (Ni) or further aluminium (Al), silver (Ag)        or indium (In).

In a solid photovoltaic device said to be of the substrate type, thelayers above are completed with:

-   -   a metal grid applied against said front contact layer, thus        forming the front face (sunny side) of the device, and    -   a glass or steel layer applied against said rear contact layer.

In a solid photovoltaic device said to be of the superstrate type, thelayers above are completed with a glass layer forming the front face(sunny side) of the device, applied against said front contact layer.

Solid photovoltaic devices with a structure of the substrate type or ofthe superstrate type are well known to one skilled in the art. Forexample they are described in the preface of the book <<Thin film solarcells; manufacture, characterization and applications>>, edited by JefPoortmans and Vladimir Arkhipov, Wiley 2007, ISBN 13 9780470 09126-5,(preface on page xxiv).

The present invention also relates to a method for preparing a colloidalaqueous solution of amorphous nanoparticles of a metal chalcogenideaccording to the invention, to the obtained colloidal solution and toits use for making a film of metal chalcogenides with large grains.

In the present description, by <<colloidal solution>> or <<colloid>>, ismeant a liquid of a homogenous dispersion of particles for which thedimensions range from 2 to 500 nm, it being understood that below 2 nm,a liquid solution and not a so-called <<colloidal solution>> isobtained. The stability of such a homogenous dispersion is due to theslow separation of the two solid and respective liquid phases.

By <<material consisting of amorphous nanoparticles>>, is meant amaterial containing no or very few crystallized particles, i.e.characterized by the absence of a diffraction peak, by diffraction ofX-rays (XRD technique).

Still more particularly, the present invention relates to metalchalcogenides of formula M-C wherein:

-   -   M represents one or several identical or different metal        elements selected from Cu, Zn, Sn, Ge, Sb and Bi, preferably Cu,        Zn, Sn and Sb, and    -   C represents one or several identical or different chalcogenide        elements selected from S, Se and Te.

The highest photovoltaic conversion rates based on metal chalcogenidesare greater than 20%; they are obtained today with photovoltaic cellscomprising as an absorption layer, a layer of the typeCuIn_(1-x),Ga_(x)Se₂.

However, indium (In) and gallium (Ga) are not very abundant on Earth andare therefore expensive for mass production. Cadmium telluride CdTe isanother well known example from among metal chalcogenides which givesthe possibility of obtaining photovoltaic devices with high yield(>17%). But, the relatively low abundance of cadmium and tellurium, aswell as the toxicity of Cd are a problem.

The metal chalcogenide compounds M-C as defined above are of particularinterest for manufacturing an absorption layer of an inexpensivephotovoltaic device with relatively high yield, since the metals Mlisted above are abundant and non-toxic.

The present invention more particularly relates to absorption layers ofthe Cu₂ZnSnS₄ (CZTS) type as well as to their derivativesCu₂Zn(Sn_(1-y),Ge_(y))(S_(1-x),Se_(x))₄ (noted as CZTGSSe), SnS, Sb₂S₃and Cu₂Zn(Sn_(1-y),Sb_(y))(S_(1-x),Se_(x))₄ and/or CuSb(S,Se)₂.

The metal chalcogenide layers for photovoltaic cells are traditionallyobtained with vacuum deposition methods such as co-evaporation (ClGSe),sublimation in a closed space (CdTe) or further sputtering (CZTSSe).However, the production and maintenance costs associated with vacuumtechniques are typically high, which limits their use in applicationsfor mass markets. Also, chemical vapor deposition methods resort tovacuum techniques, which make them complicated and costly forcontinuously achieving deposition and on wide surfaces.

In order to circumvent these limitations, deposition methods at ambientpressure are therefore preferable, such as for example deposition in achemical bath, electrochemical deposition, spraying, printing or tapecasting. Deposition in a chemical bath is generally characterized by lowdeposition rates relatively to the desirable thickness for the activelayer (of the order of one micrometer), by compromises between lowchemical yield and thickness uniformities (a fortiori on large surfaces)and the formation of material with low crystalline quality (whichrequires subsequent annealing) with inclusion of more or less controlledimpurities which makes the technique unsuitable for manufacturing thephotovoltaic active layer. Likewise, electrochemical deposition does noteither allow continuous deposition and poses problems for controllinguniformity over large surfaces, which imposes relatively slow depositionrates.

It is therefore preferable to achieve deposition of the activephotovoltaic layer with a deposition method based on a solution, forexample deposited by spraying or by printing, or on a slurry, forexample deposited by tape casting. In every case, these depositiontechniques at atmospheric pressure, potentially continuous techniquesand on large surfaces are based on a more or less concentrated colloidalor liquid solution.

As compared with a liquid solution, the colloidal solution has certainadvantages. In a liquid solution, the useful species (copper, tin,sulfur, etc.) are dissolved in the solvent, for example in ionic form(example Cut) or as ionic complexes (example Cu(CH₃CN)₄ ⁺, Cu(NH₃)n]²⁺,Sn(OH)₆]²⁻ etc.). In a colloidal solution, also-called a <<colloid>>,solid particles are present in a suspension and consisting of usefulchemical species; the size of these particles is less than 1 mm andtypically of the order of a few tens of nanometers.

By comparison with the liquid solution, a first benefit of the colloidalsolution is to be able to separate the useful solid portion i.e. theparticles, from the liquid portion (by filtration orsedimentation/centrifugation) and thus be able to rinse the colloid fromits impurities and from possible secondary products, residues ofchemical reactions which may have been used for making the colloid. Asecond benefit is that the useful chemical species are already gatheredin a solid way at an atomic scale with stoichiometry/chemicalcomposition equal to or close to the desired final composition, whichensures better control of the final composition, relatively to a liquidsolution which may easily be poorly mixed. A third benefit of thecolloidal solution is that it may be used as a starting solution forforming a dense layer with different methods, the nanoparticles may bedried and sintered so as to produce a more or less porous material (forthen being used for diverse applications, such as electrodes forbatteries, for catalysis, etc.) or else re-dispersed in a dispersionliquid allowing deposition by spraying or by tape casting on asubstrate. Further, it is also possible to deposit the particles on aninside of a nano-porous substrate in order to modify the surfaceproperties thereof. For example this is the case of nano-porous films ofnanocrystalline TiO₂ (n semi-conductor) of a photovoltaic device, forexample by soaking a nano-porous TiO₂ substrate in a so-called colloidalsolution of a metal chalcogenide.

The best photovoltaic performances of cells based on CZTSSe films areobtained when the film is made by a method via a hybrid route between aliquid and a colloid (Todorov & al.: Thin solid Films Vol. 519, N° 21(2011) pp 7378-81). However, the hydrazine solvent used by this team isboth very highly toxic and very flammable in air, which requiresprecautions of use incompatible with industrial use. In order to reducethe risk of flammability, the hydrazine was also diluted down to 50% byadding water, which had the consequence of slightly reducing theperformance from 9.6% to 8.2%. In spite of this, the toxicity andprecautions of use related to hydrazine persist.

Another relatively well documented method in the literature is themethod said to be <<by hot injection of precursors>> (WO2008/021604A2).This method consists of conducting a chemical reaction, for severalhours and at a high temperature (between 220° C. and 300° C.) betweenmetal precursors (salts in the form of powders) dissolved in anoleylamine solvent or other solvents, also toxic or dangerous for humansand/or the environment, of the alkylamine or alkyl phosphine (TOPO)type, and of hot injecting a solution containing the chalcogen. Forexample metal sulfur, selenium or a salt based on sulfur is typicallydissolved in TriOctylPhOsphine (TOPO) oxides. TriOctylPhOsphine oxide isextremely destructive for tissues of mucosas, of the upper respiratorytract, of the eyes and of the skin. In an alternative method, (Chinesepatent CN102108540), of hot injection (180-280° C. for 2-60 min), theoctadecylamine organic solvent used for dissolving the sulfur powder isa flammable, explosive and extremely dangerous solvent for the eyes, theskin and aquatic media. This is why more particularly the inventionrelates to a method for preparing a metal chalcogenide colloidalsolution.

It is generally recognized by one skilled in the art that lowphotovoltaic performances are obtained when the active absorbing layerof the photovoltaic device, based on inorganic crystallinesemi-conductors such as silicon, semi-conductors III-V (AsGa, AlGaAsetc.) or metal chalcogenides CdTe, CIGS or CZTS, consists of smallgrains, and that better photovoltaic cells are made from continuouslayers with large grains. Typically, the desired grain sizes are of theorder of the thickness of the layer, itself of the order of onemicrometer.

On the other hand, it may be noted that in the large majority, thecolloidal synthesis methods are directed to making crystallizedparticles. The arguments put forward are generally greater purity, orelse the obtaining of a less porous layer, or else further bettercontrol of the elementary composition of the particles at an atomicscale (before even forming the layer) and therefore of that of the finallayer. Finally, the final crystalline layer which is targeted, would beobtained more easily from crystalline particles, since they alreadyincorporate the desired crystalline phase. However, these methods formaking a colloidal solution of crystallized metal chalcogenide particlesrequire addition of ligands, the crystal growth then being thermallyactivated at 200° C. or more, which represents long and costly methods.Further, the films made from these colloidal solutions of crystallinemetal chalcogenide nanoparticles nevertheless have then to be generallysubject to additional heat treatment at higher temperatures, of theorder of 400 to 600° C., this in order to densify, agglomerate andincrease the size of the crystals, preferably up to a grain size closeto the total thickness of the film, typically of the order of onemicrometer. It would be advantageous, at least economically (lesserthermal budget), to conduct the colloidal synthesis of the particleswithout having to heat during the synthesis at 200° C.

The first colloidal synthesis studies, in the presence of water haverapidly shown problems of hydrolysis and/or oxidation of the metal ionspecies notably of the cations Cu⁺, Zn²⁺, Sn⁴⁺, Sb³⁺, In³⁺.

A technique known to one skilled in the art for efficiently reducing theproblems of hydrolysis and of oxidation in an aqueous medium consists ofprotecting an ionic species in solution with a ligand.

In WO2011/066205 and WO2011/146791, a method for synthesis of acolloidal solution of crystalline copper chalcogenide nanoparticles isdescribed, wherein metal and chalcogen precursor solutions are appliedwith ligands, in an acid medium for adjusting the pH and avoidinghydrolysis and/or oxidation of the metal ion species. By <<ligand>>, ismeant here a coordination species consisting of an ion or a moleculebearing chemical functions allowing it to bind to one or several metalcentral atoms or ions through a covalent bond. In WO2011/066205, copperchalcogenide nanoparticles are produced from a reaction mixture ofprecursor solutions with stirring for several hours and optionally withheating to 100° C. and beyond. In WO2011/146791, the application ofwater and of a colloidal aqueous solution is avoided in order to avoidproblems of hydrolysis and/or oxidation of the metal ion species,notably of the cations Cu⁺, Zn²⁺, Sn⁴⁺, Sb³⁺. In both of these patentsWO2011/146791 and WO2011/066205, the role of the ligands is also toavoid agglomeration of the formed nanoparticles, an agglomeration whichleads to precipitation and therefore to instability of the colloid. Itwas shown that the application of organic ligands is detrimental to theelectric transport properties between the particles.

In WO2011/0662205, the ligands are organic molecules comprising amine,thiol or organic acid groups. These organic ligands aim at complexingsaid metal in order to slow down the kinetics of the reaction betweenthe metal precursors and the chalcogenide precursor with view toobtaining a colloidal solution of crystallized nanoparticles as shown inFIG. 3 (and not a colloidal solution of amorphous nanoparticlesaccording to the present invention). The colloidal solutions obtainedare not very stable and, the presence of ligands in said colloidalsolutions obtained makes the method less easy (heating required), longerand more costly, and furthermore in the crystallized chalcogenide filmobtained after deposition and annealing of the colloidal solution on asubstrate, the carbon or oxide residues from the decomposition of theligands is a drawback since they may prevent crystallization and/orlimit the formation of large grains and/or generate impuritiesgenerating electric faults, which is detrimental to the photovoltaicproperties of the film.

In WO 2011/0662205, acetonitrile is not mentioned as a ligand and doesnot correspond to the given definition of a ligand, but is mentioned asa formulation solvent of the colloidal solution after its preparation.

In publications Schulz et al. 1997/2000 (Photovoltaics Program Reviewedited by AIP Press, New York 1997, WO99/37832) and Zhang et al. 2012(Applied Physics Express 5, 2012, 012301), methods are described forpreparing a colloidal solution of metal chalcogenides consisting ofamorphous or slightly crystallized nanoparticles for producing asemi-conducting absorbing film of a photovoltaic device. In both ofthese publications, the colloidal metal chalcogenide solution is madefrom a mixture of a first precursor solution of said metal M and of asecond precursor solution of said chalcogen. In Schulz et al. above, acolloidal solution of a metal chalcogenide CuInGaSe₂ (ClGS) is moreparticularly prepared and in Zhang et al. above, a metal chalcogenideCu₂ZnSn(S,Se)₄ (CZTSSe) is prepared from a precursor solution in organicsolvents, pyridine and methanol. More particularly, in this method, thequestion is to typically dissolve metal precursor salts i.e. iodidessuch as CuI, CdI₂, ZnI₂, SnI₄, InI₃, GaI₃, in pyridine, and on the otherhand dissolve a chalcogenide precursor salt (of sodium or potassium,such as Na₂Te, Na₂Se, or Na₂S) in methanol. Both of these solutions arethen mixed at −78° C. or −42° C. or further −0° C. according to thepublished cases (and not by hot injection as this is the customary casein methods for colloidal synthesis of crystallized nanoparticles), byintroducing the sulfur/methanol solution into the metal/pyridinesolution, and then the mixture is brought back to room temperature forseveral minutes during which the unstable colloid naturallyprecipitates.

The initial colloidal solutions (before forming a thin layer) weretherefore colloidal non-aqueous solutions of non-crystallized(amorphous) or slightly crystallized nanoparticles.

Under the conditions applied in these publications, it is proposed thatwater causes destabilization, aggregation and decomposition of thecolloid by ion exchange of the methanol or acetonitrile by water whichadheres to the surface of the particles, which would then introduceoxygen into the deposited layers and would degrade their photovoltaicperformance.

In references Schulz et al. 1997/2000 and Zhang et al. 2012 above, thesynthesis of a colloidal solution of amorphous nanoparticles by mixing asolution of precursors is achieved under cold conditions (−178° C., −42°C. or 0° C.) which represents a restriction and a cost and forces theuse of organic solvents compatible with these temperatures, butrelatively toxic, notably methanol and/or pyridine.

These temperature conditions seem to be imposed by the requirement ofstabilizing the relevant metal chalcogenide colloid in the relevantsolvent. Further, in references Schulz et al. 1997/2000 and Zhang et al.2012 above, the thin layer films deposited on a substrate obtained bydeposition from these colloidal solutions consisting of amorphous orslightly crystallized particles are characterized by small grain sizes,even after annealing at a high temperature, with which it is notpossible to obtain high quality photovoltaic performances. In particularin WO99/37832 (Schulz et al.), the ClGS layer with small grains obtainedafter deposition by spraying has too large porosity and was not able tobe densified in spite of various heat treatments. Indeed, in spite ofmany annealing attempts, the ClGS films obtained always included anintermediate layer consisting of small grains, which does not correspondto the criteria of a high quality layer for a photovoltaic application.Indeed, the low photovoltaic performance of the ClGS cell was ascribedto the high series resistance of this intermediate, porous andsmall-grain layer.

A disadvantage of the method described in Schulz et al 1997/2000 abovefrom amorphous nanoparticles stemming from a methanol/pyridine mixture,is therefore such that it does not give the possibility of producing adense ClGS layer with large grains, which are required for making a highyield photovoltaic device.

In Zhang et al. 2012 above, the film obtained by deposition of thecolloidal solution of metal chalcogenide nanoparticles comprisednanoparticles of relatively large sizes (80 nm) and after annealing on asubstrate did not exhibit any large grains. On the other hand, in Zhanget al. 2012, the authors did not succeed in obtaining a colloidalsolution when the metal chalcogenide only comprised sulfur and not acombination of sulfur S and of selenium Se. In Zhang et al. 2012 above,the solution of methanol comprising both Na₂S and Na₂Se, led to theformation of a strongly aggregated and amorphous solid colloid, in whichthe authors distinguish rounded particles with a size of 80 nm of CZTSSe(Cu₂ZnSn(S,Se)₄). After deposition on molybdenum and then densificationannealing, a negligible photovoltaic result (0.0002%) was obtained whenthe annealing at 550° C. was carried out only under nitrogen, because ofcrystalline decomposition of the film (according to XRD analysis). Aphotovoltaic result of 2.2% is obtained when the 550° C. annealing iscarried out under nitrogen with addition of tin, which would avoiddecomposition. Except for an X diffraction spectrum proving the presenceof CZTSSe crystals after the heat treatment step at a high temperature(550° C.), no indication on the size of the film grains is given.

A first object of the present invention is therefore to provide a novelmethod for preparing a colloidal solution of metal chalcogenidenanoparticles which is fast and economical to carry out, notably amethod which allows preparation of a colloidal solution at roomtemperature not requiring heating for hours at 100° C. and beyond andnot requiring cooling down to 0° C. or below.

Another object of the present invention is therefore to provide a methodallowing preparation of metal chalcogenide colloidal solutions offormula M-C as defined above, not involving the application of toxicsolvents or requiring cold reaction temperatures, in particular atemperature of less than or equal to 0° C.

Another object of the present invention is to provide a method formaking a film obtained from a colloidal solution with which it ispossible to obtain metal chalcogenide crystals with large grains, saidfilm being deposited on a substrate, useful for imparting highphotovoltaic performances to a photovoltaic device comprising them.

More particularly, an object of the present invention is therefore toprovide a method for preparing a colloidal solution of metalchalcogenide of formula M-C as defined above which is carried out atroom temperature and at an atmospheric pressure not involving theapplication of a dangerous and/or toxic solvent or the application of aligand with a covalent bond as defined above and/or without adding acidin precursor solutions upon preparing the colloidal solutions.

Finally, an object of the present invention is to provide a stablecolloidal solution of amorphous nanoparticles of a metal chalcogenidewhich allows it to be deposited at atmospheric pressure and at roomtemperature and then densified by annealing on a substrate in order toobtain a crystallized metal chalcogenide film in the form of largegrains with a low roughness surface condition.

According to the present invention, it was discovered that for preparinga colloidal solution of metal chalcogenide of formula M-C as definedabove, it is possible to operate in an aqueous medium withoutdecomposition of the colloid in return for conditions for application ofthe method for preparing a colloidal aqueous or hydro-alcoholic solutiondefined hereafter and allowing application of a method for making a filmof crystallized semi-conducting metal chalcogenide nanoparticles withlarge grains as also defined hereafter.

To do this, the present invention provides a method forquasi-instantaneous preparation, and at room temperature, of a colloidalaqueous, alcoholic or hydro-alcoholic solution of amorphousnanoparticles of metal chalcogenides of formula M-C wherein:

-   -   M represents one or several first metals, either identical or        different, selected from Cu, Zn, Sn, Ge, Sb and Bi, preferably        Cu, Zn, Sn and Sb and    -   C represents one or several chalcogenide elements either        identical or different selected from S, Se and Te,

characterised in that the following successive steps are carried out ata temperature from 0° to 50° C., preferably from 20° to 40° C. wherein:

a) a first solution of precursor(s) of said first metal(s) M, other thanone or more chalcogenide salts C in solution, is prepared, in a solventconsisting of pure acetonitrile or mixed with water and/or an alcoholother than methanol, preferably ethanol, and

b) a second aqueous, alcoholic or hydro-alcoholic solution ofprecursor(s) of chalcogenide(s) C consisting of one or more chalcogenidesalts of second metal(s), other than one or more first metal(s) M, isprepared, the alcohol of said second solution being other than methanol,preferably ethanol, and

c) both of said first and second solutions of precursors are mixed atatmospheric pressure and at room temperature until a crude colloidalsolution is obtained quasi-instantaneously, comprising primary amorphousnanoparticles with sizes of less than 30 nm, preferably 3 to 20 nm, and

d) the solid portion is separated from said colloidal solution of stepc), preferably by centrifugation in order to obtain a solid residueafter removing the liquid supernatant, and

e) the solid residue obtained in step d) is rinsed by pouring on it anaqueous, alcoholic or hydro-alcoholic solution in order to form acolloidal solution, the alcohol of said aqueous, alcoholic orhydro-alcoholic colloidal solution being other than methanol, preferablyethanol, and

f) again the solid portion is separated from said colloidal solution ofstep e), preferably by centrifugation in order to obtain after removingthe liquid supernatant, a rinsed solid residue as a humid paste, and

g) said humid paste from step f) is re-dispersed in a dispersion solventcomprising, preferably consisting, an aqueous, alcoholic orhydro-alcoholic solution, the alcohol of said alcoholic orhydro-alcoholic solution being, if necessary, a non-toxic alcohol,notably an alcohol other than methanol.

According to the present invention, in the method for preparing thecolloidal solution, the preliminary preparation is achieved at roomtemperature or requiring reduced heating of two separate solutions ofprecursors based on salts of M and respectively a salt of C withdifferent solvents, without adding any ligand, notably steps a) and b),and their mixture at a reduced temperature notably at room temperatureand under atmospheric pressure as defined in steps a) to c).

The smallest size of the nanoparticles obtained in step c) makes therinsing steps d) to g) more effective for removing the by-products ofthe reaction as well as the synthesis solvent acetonitrile and otherresidual impurities.

By <<ligand>>, is meant here an organic molecule (other than themolecule C) capable of binding and/or complexing a said first metal M,notably an organic molecule substituted with at least one group selectedfrom the amine (—NH₂), thiol (—SH), amide or thioamide groups, notably—CONH₂ or —CSNH₂, and/or organic acid groups (such as the carboxylicacid group —COOH) or a phosphoric acid group, notably —PO₃H₂.

A colloidal solution stable at room temperature obtained without addingany ligand is not only easier to obtain and to apply, but further, itcomprises less residual impurities, which contributes to improving thequality of a film obtained after deposition and annealing of thecolloidal solution as described hereafter. In particular, thiscontributes to obtaining a crystallized continuous film with largegrains and more homogenous with better photovoltaic performances.

Preferably, in step g) a dispersion solvent is applied, consisting in anaqueous, alcoholic or hydro-alcoholic solution, the alcohol of saidalcoholic or hydro-alcoholic solution being a non-toxic alcohol having aboiling temperature of less than the boiling temperature of water,preferably ethanol or propanol, still preferably consisting in awater/ethanol mixture.

These dispersion solvents were selected for their property of dispersionof amorphous nanoparticles (concentration, stability of the colloid,viscosity, non-toxicity), giving the possibility of forming a liquid,homogenous and stable colloid with amorphous nanoparticles of smallsizes, which do not naturally precipitate at room temperature before atleast 24 hours, and may be deposited by spraying (viscosity, vaporpressure and evaporation temperature) under optimum conditions in orderto obtain a continuous, homogenous film without any impurities asdescribed hereafter.

An alcohol having a boiling point below that of water is advantageousbecause in a method for making a film obtained by deposition, byspraying and annealing of the colloidal solution on a substrate asdescribed hereafter, during the contact of the colloidal solution on thehot plate of the substrate, evaporation of the solvents occurs and itappears to be preferable that the alcohol evaporates before the water inorder to set aside the risks of residual carbon contamination stemmingfrom said alcohol within said film.

Ethanol and propanol are preferred because of their total miscibility inwater, in addition to their boiling temperature below that of water (anda vapour pressure greater than that of water).

The room temperature used for the preparation of the solutions as wellas during the mixing of steps a) to c) is defined as a temperaturecomprised between 0° C. and 50° C., preferably from 20 to 40° C.

This method for preparing a colloidal solution according to theinvention is therefore particularly advantageous in that:

-   -   it is carried out at a reduced temperature notably at room        temperature and at atmospheric pressure,    -   it is quasi-instantaneous and provides a homogenous and stable        colloid, and    -   it allows application of an aqueous solvent in the absence of        any toxic solvent and/or organic ligand with a covalent bond and        without adding any acid, and    -   the pH is self-controlled at an acid pH below 2, without        adjusting any pH, because of the applied solvents and        precursors, and    -   acetonitrile is not a dangerous or toxic solvent and allows        protection of the atoms of the metal cations against oxidation        thereby playing the role of a protective ligand against        hydrolysis of the precursors and/or of the formed particles,        without being engaged into a covalent bond unlike a ligand.

The rapidity of the reaction in step c), typically carried out in a timeinterval of less than one minute, even less than 5 seconds, is theconsequence of the absence of any complexing ligand and binding saidmetal.

This reaction rapidity of the precursors in step c), contributes toobtaining amorphous nanoparticles and of smaller sizes, thenanoparticles not having the time for growing at the expense of theothers.

On the other hand, the high concentrations and small sizes ofnanoparticles impart greater stability to the colloid of nanoparticlesobtained in step c), the latter remaining stable for at least two daysat room temperature.

The colloidal solution obtained further gives the possibility ofobtaining a film of crystalline metal chalcogenide(s) with large grainsaccording to the object of the present invention after deposition andannealing of a layer of amorphous metal chalcogenide nanoparticles on asubstrate.

Another advantage of the use during the colloidal synthesis, of anaqueous, alcoholic or hydro-alcoholic solvent according to the inventionis that they allow easier dissolution of the chalcogenide precursorsalts, i.e. in stronger concentrations, notably a concentration of morethan 5 M (moles per liter) in the case of the NaSH or Na₂S salts. Theobtained colloids may thus be further concentrated. In the same way, thereaction by-products are more easily dissolved and removed by means of alesser number of rinsing steps with aqueous or hydro-alcoholic rinsingsolvents.

According to other preferred more particular features:

-   -   in step a), said salt of said first metal M is a halide,        preferably a chloride, and    -   in step b), said chalcogenide of second metal (other than M) is        an alkaline or earth-alkaline salt, preferably a sodium or        potassium salt, preferably Na₂S or NaSH.

In prior publications, the metal halide salt or metal precursor M wasoften in the form of an iodide, the iodide being better dissolved thanthe chloride in the applied organic solvents. The application ofchloride precursors according to the present invention, notably in anaqueous or hydro-alcoholic medium is, however, advantageous sincechloride salts are more easy to access (and less expensive) and thecolloid CZTS which results from them is more stable than with iodideprecursors.

Still preferably, M is a ternary mixture of Cu, Zn and Sn, and C is S,and preferably in step c) amorphous nanoparticles of Cu₂ZnSnS₄ areobtained.

The application of a metal chalcogenide only containing the chalcogen Swithout any selenium (Se) is advantageous since selenium reduces theband gap of the absorption layer and once it is applied in aphotovoltaic device, the metal chalcogenide with only S gives thepossibility of obtaining greater photovoltaic voltages (beyond 0.6 Voltsaccording to the literature).

In another embodiment M-C is selected from Sb₂S₃ and SnS.

In other further embodiments M-C is selected from CuSbS₂, Cu₂Sn(S,Se)₃,Cu₂Zn(Sn,Sb)S₄, Cu₃BiS₃ and Cu₄SnS₄.

According to other advantageous particular features:

-   -   in step a) said first solution is carried out containing CuCl₂,        ZnCl₂ and SnCl₄, and    -   in step b), said second aqueous solution of NaSH is carried out        preferably at a concentration of more than 5 M, and    -   in step c), amorphous nanoparticles of Cu₂ZnSnS₄ are obtained        notably with a size from 3 to 20 nm.

Another advantageous effect of the application of a hydro-sulfide saltof a chalcogenide such as NaSH or KSH is that their reaction with metalchlorides reinforces the acidity of the thereby obtained colloidalsolutions, which reduces the risks of degradation of the nanoparticlesby possible hydrolysis by the OH⁻ ions. The pH adjustment, by anadditional step for example consisting of adding an acid, is thusunnecessary and the method is easier and therefore advantageous.

According to other particular features:

-   -   in step b), said second aqueous solution of precursor(s) of        chalcogenide(s) consist in a solution only containing water as a        solvent; and    -   in step a), the solvent of said first solution of precursor(s)        of metal(s) M consists in acetonitrile mixed with water,        preferably in an acetonitrile/water ratio of at least 50/50,        preferably pure acetonitrile; and    -   steps f) and g) for rinsing the colloid are repeated once or        several times by centrifugation and then re-dispersion in an        aqueous, alcoholic or hydro-alcoholic solvent; and    -   the water and the solvents used are deoxygenated beforehand by        sparging/bubbling with a gas not containing any oxygen,        preferably a neutral gas, still preferably nitrogen, and the        mixture of step c) is made in a vacuum chamber or containing an        atmosphere without any oxygen, preferably with a neutral gas,        still preferably nitrogen. This latter feature gives the        possibility of avoiding oxidation and/or hydrolysis of the metal        cations in the precursor solutions and in the colloidal        solution.

In the present application, by <<atmosphere without oxygen>>, is meantan oxygen content of less than 1 ppm (parts per million).

The present invention also provides a colloidal solution, or an inkformulated in a so-called dispersion solvent comprising an aqueous,alcoholic or hydro-alcoholic solution, obtained by the method forpreparing a colloidal solution according to the invention, of amorphousnanoparticles comprising primary nanoparticles with sizes of less than30 nm, preferably from 3 to 20 nm, the alcohol of said solution being anon-toxic alcohol notably other than methanol.

More particularly, said colloidal solution consists in saidnanoparticles in dispersion in a dispersion solvent consisting in anaqueous, alcoholic or hydro-alcoholic solution of amorphousnanoparticles, said alcohol of said solution having a boilingtemperature below that of water, said dispersion solvent preferablyconsisting in a water/ethanol mixture.

Still more particularly, said colloidal solution does not contain anyorganic ligands as defined above. By <<primary nanoparticles>> are meanthere nanoparticles as obtained before their possible subsequentaggregation in the form of an aggregate of larger size of severalprimary nanoparticles together.

Obtaining primary nanoparticles of smaller sizes dispersed in aqueousand/or alcoholic solvents of the present invention is advantageous forobtaining not only in a first phase a stable colloid without adding anyligand but also in a second phase, a homogeneous film with largecrystallized grains without any residual impurities of organic ligandsin the manufacturing method described hereafter.

The present invention provides a method for manufacturing apolycrystalline film of metal chalcogenides with large crystallinegrains with sizes at least equal to half the thickness of said film, bymeans of a colloidal solution according to the present invention, saidfilm being deposited on one or more materials in layers forming asubstrate, said metal chalcogenide being of formula M-C wherein:

-   -   M represents one or several metal elements, either identical or        different, selected from Cu, Zn, Sn, Ge, Sb and Bi, preferably        Cu, Zn, Sn and Sb, and    -   C represents one or several chalcogenide elements either        identical or different selected from S, Se and Te,

wherein the following successive steps are carried out:

1) a layer of amorphous nanoparticles of metal chalcogenide(s) isdeposited on said substrate from a said aqueous, alcoholic orhydro-alcoholic colloidal solution according to the invention, and

2) heat treatment of said layer of metal chalcogenide(s) is carried outat a temperature of at least 300° C., preferably at least 450° C., inorder to obtain densification of said layer of metal chalcogenide(s) andcrystallization of the nanoparticles, over a thickness from 0.2 to 5 μm,preferably of about 1 μm.

In examples 3 and 4 hereafter, it is shown that the preferentialdispersion solvent is a water-ethanol mixture for producing afterdeposition by spraying and heat treatment, a continuous and dense(without any crack or hole) film of crystalline CZTS layers with a largegrain, and adherent on a molybdenum substrate.

More particularly, in the method for manufacturing a film according tothe invention:

-   -   in step 1), a said aqueous colloidal solution is sprayed with a        carrier gas consisting of a gas without any oxygen preferably a        neutral gas, still preferably nitrogen, at atmospheric pressure        and at a substrate temperature brought to at least 100° C., in        order to form on a so-called substrate, a layer of said        colloidal solution with a thickness from 0.5 to 15 μm preferably        of about 3 μm, and,    -   steps 1) and 2) are carried out in a vacuum chamber or filled        with a gas without any oxygen, preferably a neutral gas, still        preferably nitrogen.

Advantageously, said substrate is a substrate intended to be coveredwith a type p semi-conductor absorption layer in a solid photovoltaicdevice.

More particularly, said substrate consists of a glass or steel layercovered with a so-called rear contact layer, preferably consisting of amolybdenum layer, useful in a solid photovoltaic device of the substratetype.

Still more particularly, said substrate is a substrate intended to becovered with an absorption layer in a photovoltaic device of thesuperstrate type, said substrate consisting of a glass layer covered atleast successively with:

-   -   a transparent front contact conductive layer, and    -   preferably a transparent and insulating compound layer, and    -   a buffer layer of a type n semi-conductor.

Said buffer layer of a type n semi-conductor is then a p-n junction withsaid absorption layer of type p, said buffer layer for exampleconsisting of CdS, In₂S₃, or Zn(S,O,OH).

The present invention also provides a film of crystallized metalchalcogenide(s) with large crystalline grains with a size at least equalto the half of the thickness of said film, continuously deposited on asubstrate obtained by the method for making a film according to theinvention.

More particularly, the film has surface roughness with an arithmeticmean height of the peaks Sa, according to the ISO 25178 standard, ofless than half of the thickness e of the film, preferably less than0.2×e, preferably still less than 0.15×e for a surface area of at least20×20 μm².

This low surface roughness property of the film obtained by the methodaccording to the invention, is original and advantageous in that itavoids direct contact between both adjacent layers of the film. Thiscontinuity property of the layer is advantageous for avoiding electricshort-circuits of the photovoltaic device.

Still more particularly, the film consists of metal chalcogenide(s)Cu₂ZnSnS₄ (CZTS) in the Kesterite crystalline form, with a thicknessfrom 0.1 to 5 μm, preferably about 1 μm.

In order to determine whether a thin layer of a dried colloidal solutionis crystallized or amorphous, the X-ray diffraction technique istherefore applied, (see for example the text book of René Guinebretière,2^(nd) edition Lavoisier, Paris, ISBN 2-7462-1238-2).

The size of a particle is measured by electron microscopy, either byscanning electron microscopy (SEM), or by transmission electronmicroscopy (TEM).

The X-ray diffraction technique (for example in the ≢-2≢ mode) alsoallows measurement of the size of the crystallite, from the integratedwidth of the diffraction peaks. For this, the material must havediffraction lines (be crystalline) but also the crystallites have to besufficiently small, of the order of 50 nm or less than 100 nm. Beyond,the technique is unsuitable because of the physical limits of the XRDequipment.

In order to determine the size of an amorphous/slightly crystallizednanoparticle at a scale of a few tens of nanometers, transmissionelectron microscopy (TEM) is therefore preferred (for example see thetext book Transmission Electron Microscopy, Volumes I, II, III and IVaccording to Williams and Carter, Springer editions 1996, ISBN978-0-306-45324-3).

The morphology of a crystalline film is characterized by the dimensionsof its reliefs in particular the size of its grains and its roughness,which are observed by microscopy (optical microscopy, atomic forcemicroscopy, SEM or TEM electron microscopy, etc.)

In the case of crystallized films with large grains, the technique ofchoice for measuring grain sizes of the order of one micrometer is thenthe scanning electron microscope (SEM) (see for example the text book<<Microscopie Electronique à Balayage et Microanalyses>> (ScanningElectron Microscopy and Microanalyses), Ed. Brisset, EDP Science 2008,ISBN 978-7598-0082-7).

The measurement of the surface roughness of a film was conducted with anatomic force microscope (AFM) and a local scanning probe microscope(SPM), of model AFM/SPM from Agilent Tech. (U.S.A.), series 5100.

The present invention also provides a photovoltaic device comprising anabsorption layer consisting of a said film deposited on a substrateaccording to the invention.

More particularly, the photovoltaic device according to the inventioncomprises the following successively stacked layers:

-   -   a substrate, preferably of sodium-lime glass, covered with a        thin conductive molybdenum layer used as a rear electric contact        layer,    -   a said thin absorbing material layer, preferably essentially        consisting of CZTS,    -   a buffer layer, preferably a layer made on the basis of a type n        semi-conductor, such as cadmium sulfide CdS, or indium sulfide        In₂S₃, or further oxysulfide alloys such as Zn(S,O,OH),    -   a conductive transparent layer, preferably a layer consisting of        a first so-called intrinsic (non-doped) ZnO layer, covered with        a transparent conductive layer, preferably of tin-doped indium        oxide (ITO) or aluminium-doped zinc oxide (AZO), and    -   a metal grid (of aluminium, nickel, and/or silver) of the        electric contact face before being deposited on said transparent        layer.

Other features and advantages of the present invention will becomeapparent in the light of the detailed exemplary embodiments which willfollow with reference to the following figures.

FIGS. 1A and 1B represent TEM observation photographs of a crude CZTScolloid prepared in a water/acetonitrile mixture according to Example 1,by measurement with an STEM detector (FIG. 1A) and at a greater TEMmagnification (FIG. 1B), FIG. 1C being a photograph of the diffractionspectrum obtained by electron diffraction ED on the dried powder.

FIGS. 2A, 2B and 2C represent photographs of CZTS nanoparticles incolloidal form taken with an SEM type microscope (FIG. 2A), and afterdeposition as a film deposited by spraying on a substrate (FIG. 2B), andafter annealing at 525° C. of said film (FIG. 2C).

These photographs are taken by electron microscopy, measured atdifferent steps of the manufacturing of the film, on a glass substratecovered with molybdenum (FIG. 2B and 2C).

FIG. 3 is an X-ray diffraction spectrum measured on layers ofnanoparticles of FIGS. 2A (curve a), 2B (curve b) and 2C (curve c). TheCps (<<Counts per second>>) values in ordinates are according to alinear scale (<<Lin>>).

FIGS. 4A) to 4D) represent photographs taken by electron microscopy,after crystallization annealing at 525° C., of the surface of a CZTSfilm according to Example 4 dispersed in a pure ethanol solvent anddeposited by spraying at 75° C. (FIG. 4A), a TEP solvent and spraying at300° C. (FIG. 4B), a DMSO solvent and spraying at 300° C. (FIG. 4C) anda water solvent and spraying at 300° C. (FIG. 4D).

FIG. 5 represents a characteristic current-voltage curve under a solarsimulator (100 mW/cm²) of a photovoltaic cell Cu₂ZnSnS₄ in a Mosubstrate structure according to Example 7 (active surface area=0.25cm²).

EXAMPLE 1 Preparation of a CZTS Colloid

A colloid of nanoparticles Cu—Zn—Sn—S was made by reacting a mixture ofmetal salts, CuCl, ZnCl₂, SnCl₄.5H₂O in water/acetonitrile with anaqueous solution of NaSH, at room temperature and under an inertnitrogen atmosphere, according to the global reaction:

2CuCl+ZnCl₂+SnCl₄+4NaSH⇄Cu₂ZnSnS₄+4NaCl+4HCl

This reactive system is suitable in the sense that the byproducts of thereaction, for example NaCl or HCl are soluble in water while thenanoparticles are solid and dispersed as a colloid.

The aqueous solution (0.12 M) of NaSH is prepared in a 50 ml bottle, byweighing 0.56 grams of hydrated NaSH powder (provider Aldrich, product16,152,7) and adding 50 ml of deionized water, deoxygenated beforehandby bubbling for 30 minutes with nitrogen. This aqueous solution of thesulfur precursor NaSH is then sealed with a plug, and then stored.

The solution of copper-zinc-tin (CZT) metal chlorides inwater/acetonitrile is prepared in a nitrogen glove box by:

1. weighing 469 mg of copper precursor powder: CuCl (provider Aldrich224332), 415 mg of zinc precursor powder: ZnCl₂ (provider Aldrich208086) and 893 mg of tin precursor powder: hydrated SnCl₄ (Aldrich244678); and then

2. by adding 10 ml of anhydrous acetonitrile (Aldrich 271004);

3. after dissolution and mixing with ultrasound for a few minutes, ayellow-greenish solution is obtained with a concentration of 1 mol/L(Cu+Zn+Sn) which is then diluted 5 times in acetonitrile (volumes in aratio from 1 to 4) and then itself diluted twice with water (volumes 1and 1) and thereby obtaining a concentration of 0.1 mol/L.

The colloidal synthesis reaction is conducted by pouring 10 ml of theNaSH solution (0.12 M) in 10 ml of a solution of metal precursors CZT(0.1 M). This synthesis carried out at ambient pressure and temperatureis very rapid and gives rise to a colloidal CZTS solution, according tothe global reaction indicated above.

The pH of this crude colloid was measured to be equal to pH=0.3 whichdefines a very strongly pronounced acidity, favorable for avoidinghydrolysis of the metal elements or particles.

This crude colloid was analysed by Transmission Electron Microscopy. Amodel 2100 FEG 200kV from JEOL (Japan), equipped with EDX(Energy-dispersive X-ray Spectroscopy) detectors, STEM BF (ScanningTransmission Electron Microscope Bright Field) and STEM DF (SurfaceTransmission Electron Microscope Dark Field) with a wide angle HAADF(High Angular Annular Dark Field) is used.

For this, a sample holder consisting of a carbon membrane on a nickelgrid was soaked in the non-diluted colloid and simply dried in ambientair before being introduced into the TEM vacuum chamber. According toFIG. 1A, the dried colloid forms aggregates of primary nanoparticles,the characteristic size of which is from 2 to 5 nm and with a roundedshape characteristic of amorphous particles. The average elementaryanalysis achieved by EDX measurement on many areas, indicates that thesedried particles contain the majority elements Cu, Zn, Sn, S, and Cl asimpurities. With larger TEM magnification (FIG. 1B), i.e. byconcentrating the beam of incident electrons, certain crystalline planesseem to be observable, ascribable to probable crystallization under thebeam, during the TEM observation. Electron diffraction analysis asillustrated with the example of FIG. 1C, shows the presence of a diffusediffraction ring, corresponding to atomic diffraction planescharacterized by interatomic distances compatible with the knowncrystalline structure of kesterite Cu₂ZnSnS₄ (CZTS). The crude colloidobserved under TEM therefore appears to be amorphous or slightlycrystallized in the probable kesterite structure (in particular withcrystallization during TEM observation with strong magnification).

The analysis of the composition (TEM EDX) is the following:

Cu Zn Sn S Ni Cl at. % 24.2 15.7 10.4 47.4 0.0 2.3 100

This crude colloid is then poured into a centrifugation tube and thencentrifuged for 5 min at 6,000 rpm (Universal centrifuge 16 from HettichZentrifugen AG), i.e. an acceleration of 3,700 G expressed relatively togravity. This allows separation of the solid and liquid portions. Thetransparent upper liquid portion (the supernatant) is removed by pouringit into a bottle of acid liquid waste. The lower solid portion is thenrinsed by adding 20 ml of water. After introducing a magnetic bathcovered with Teflon, this solution was placed on a magnetic plate andmixed with magnetic stirring at about 200 rpm for 5 minutes. Newcentrifugation for 10 min at 9,000 rpm (i.e. 8,400 G) is carried out,followed by removal of the supernatant. This rinsing procedure aims atremoving the reaction products such as NaCl, HCl and other excess ionicspecies. We measured that the lower and humid solid residual portionforms a slurry which consists of about 100 mg of dry material (CZTS) and500 mg of liquid, by weighing before and after drying in vacuo.

This slurry was then re-dispersed in a water/ethanol mixture (5 ml/5ml), and then mixed with magnetic stirring for 5 minutes at roomtemperature; the obtained colloid is then stable for several days andmay be used for deposition by spraying/atomization.

The particles suspended in this rinsed colloid were then analyzed by TEMmicroscopy (FIG. 2A) by using the same procedure with a carbon membraneon a nickel grid, as described before for the TEM measurements of crudecolloid (FIG. 1A). The microscopy with a STEM DF detector of FIG. 2Ashows primary nanoparticles of a rounded shape, agglomerated and with asimilar size between 2 and 7 nm typically. EDX analysis (not shown)indicates the majority presence of elements Cu, Zn, Sn and S but theabsence of the chlorine element, which illustrates the effect of therinsing. As high resolution TEM analysis and electron diffraction isunreliable because of the crystallization under a beam of electrons, thecrystallographic characteristics were measured by X ray diffraction onthe slurry from the rinsed crude colloid (but not re-dispersed),coarsely spread out on a glass plate of 2.5×2.5 cm² at room temperature.

The X-ray diffraction measurements were conducted in a diffractometer ofthe Bruker AXS D8 series 2 type, by using an X-ray source correspondingto the copper emission line Kα, in a grazing mode (with an angle ofincidence set to 1°) and a detector movable over a circular arc in orderto obtain a 2∂ diffraction angle spectrum scanned from 10° to 70° with apitch of 0.04.

Curve A of FIG. 3 (lower spectrum) shows the diffraction spectrum ofX-rays of the humid slurry of FIG. 2A. This spectrum does not exhibitwell-defined diffraction peaks but rather two very wide bumps, for whichthe positions in 2∂=28.4° and 2∂=47.3° may correspond to those of thetwo main peaks (112) and (220)/(204) respectively, of the kesteritecrystalline structure from X-ray diffraction reference spectra measuredon powder crystalline materials. Thus, the particles making up therinsed colloid and then dried in ambient air, are in majority amorphousor slightly crystallized, in consistency with the TEM observations ofFIGS. 1A and 1B (crude colloid) or TEM observations of FIG. 2A (rinsedand reconditioned or re-dispersed colloid).

The solid nanoparticles of the crude colloid and of the rinsed and thenre-dispersed colloid are both characterized by a nanometric size (2-7nm), consisting of the elements Cu, Zn, Sn and S, of an amorphouscrystalline or even very slightly crystallized structure.

EXAMPLE 2 Preparation of a Crude Colloid of Concentrated CZTS

The concentration of the CZTS colloid noted in moles per liter (or M),is defined as the number of molecules of the compound CZTS (Cu₂ZnSnS₄ orequivalent to the number of tin atoms) per unit volume. In Example 1above, the concentration of the crude colloid is 0.0125 M. In thepresent example, the concentration of the CZTS colloid was brought to0.25 M, which is equivalent to about 100 mg/ml. One skilled in the artwill recognize there a value corresponding to the typical concentrationof a slightly diluted slurry, which may be deposited by tape casting.This illustrates the versatility of the colloidal synthesis method.

In this alternative, an aqueous solution (6 M) of NaSH is prepared, byweighing 2.24 g thereof for 4 ml of solution. A solution ofcopper-zinc-tin (CZT) metal chlorides in acetonitrile is prepared byweighing 188 mg of CuCl, 166 mg of ZnCl₂ and 357 mg of SnCl₄ hydrate for5 ml of solution. The synthesis is achieved by pouring, in a firstphase, 11 ml of deionized and deoxygenated water into the solution ofmetal precursors, and then in a second phase, the 4 ml of NaSH solution.

The thereby made crude colloid of the compound CZTS is concentrated(0.25 M) and, further has strong stability after adding water in therinsing step indicated in Example 1 above.

EXAMPLE 3 Preparation of a Crystallized CZTS Film on a Glass SubstrateCovered with Molybdenum

The composition of the crystallized film Cu₂ZnSnS₄ and the compositionof the amorphous film deposited by spraying before annealing describedin the form of Cu—Zn—Sn—S, are conventionally distinguished hereafter.

Amorphous layers of Cu—Zn—Sn—S were deposited from suspendednanoparticles, by spraying on substrates of the Mo/glass type formedwith sodium-lime glass with a thickness of 1 mm covered with a 700 nmmolybdenum layer.

In the present example of deposition by spraying, a colloid according toExample 1 above was prepared and the colloid was then re-dispersed in awater/ethanol mixture (5 ml/5 ml).

The spraying step was carried out in a glove box (model GP concept typeT3 in stainless steel, from Jacomex S.A.S., France) filled with nitrogenand equipped with a purification unit (<1 ppm O₂, <10 ppm H₂O) and withan airlock being used for introducing/extracting samples. AmorphousCu—Zn—Sn—S films were deposited on Mo/glass substrates (2.5 cm×2.5 cm)brought to a temperature of 250° C. by means of a heating plate (model18×18 cm of standard ceramic, reference 444-0617 from VWR InternationalSAS, France) with modified thermal regulation in a closed loop on athermocouple of the K type placed under the substrate. An X-Y Cartesianrobot was used (of the Yamaha type, FXYx 550×550 with an RCX222controller, distributed in France by New-Mat France) for sweeping over asurface of more than 16 cm² with the spray nozzle used (a sprayer flaskon a test tube in borosilicate glass from Glasskeller Basel AG). Forinjecting the colloidal solution into the nozzle, application ofnitrogen pressure was controlled intermittently: open for 0.3 secondsand then a waiting time of 1.7 seconds; this 2 second cycling beingmaintained during the spraying duration. Good films were obtained with anozzle-substrate distance of about 15 cm with an average flow ofnitrogen carrier gas of 14 L/min at a cylinder nitrogen pressure of 0.2bars. Thicknesses of 6±1 μm were obtained by deposition by spraying fortwo minutes of the colloid of concentration 10 mg/ml (i.e. a volume ofabout 2 ml).

The morphology of the thereby deposited amorphous layers Cu—Zn—Sn—S wasdetermined by Scanning Electron Microscopy SEM (Hitachi Ltd, modelS-4700 equipped with an EDX analyser and data processing by the softwarepackage NORAN). FIG. 2B is a sectional view of a Cu—Zn—Sn—S filmdeposited by spraying at 240° C. On this picture, the glass substratemay be seen, covered with a layer of 700 nm of polycrystallinemolybdenum with a column structure, and the film Cu—Zn—Sn—S. It ispossible to discern that this film is porous and consists of fineparticles agglomerated together and separated by vacuum.

The amorphous/slightly crystallized nature of the films obtained byspray deposition from CZTS colloids, was shown by X-ray diffractionmeasurement as indicated by the spectrum of FIG. 3 (middle curve b).There again, no diffraction peak is clearly detectable.

The annealing step used for densifying and crystallizing the layer inorder to form large crystalline grains was carried out in a nitrogenglass box (reference GT concept, from Jacomex SAS, France). The filmdeposited by spraying was then laid on a heated plate (model Titaneplate with a Detlef control case, Harry Gestigkeit, GmbH) and heatedgradually under nitrogen up to an annealing temperature of 525° C.maintained for 1 hour, and then cooled for 1 hour. FIG. 2C shows asectional view of the film obtained after annealing: above thepolycrystalline molybdenum layer, a polycrystalline film with athickness of 1.8±0.2 μm expresses densification of the film which isaccompanied by crystallization with formation of the desired largegrains (from 1 to 2 μm) i.e. close to the thickness of the film.

The surface condition of the film above was analyzed and its roughnessSa was measured according to the ISO 25178 standard. The averageroughness Sa is defined as the arithmetic mean of the absolute values ofthe ordinates of the roughness profile. The following values wereobtained for a film with a thickness of 1.8 μm: 313 nm for a surface of50×50 μm², 247 nm for a surface of 20×20 μm².

EXAMPLE 4 Preparation of a Crystallized CZTS Film on a Glass SubstrateCovered with Molybdenum from a CZTS ink Formulated in Pure DispersionSolvents

In the present example, a CZTS colloid was prepared according to Example1, except that the slurry rinsed with water and then centrifuged wasthen mixed in dispersion solvents different from the water-ethanol 50-50mixture of Example 3. Among the latter, four were selected for thepresent example notably for their low vapor pressures at 20° C. for TEP(Tri-Ethyl-Phosphate) (40 Pa) or DMSO (80 Pa) or else high vaporpressures for water (2,330 Pa) and for ethanol (5,850 Pa). Theconcentration was adjusted to 10 g/L. After deposition by spraying in aglove box according to the invention, the CZTS/Mo/glass samples obtainedwere then subject to crystallization heat treatment at 525° C. undernitrogen. The surface images of the obtained samples are shown in FIGS.4A to 4D.

This CZTS film is formed with crystallized CZTS grains, as indicated bythe X diffraction spectra, (not shown). However, in the cases, A)ethanol, B) Tri-Ethyl-Phosphate (TEP) or C) DiMethyl-SulfOxide (DMSO),the adhesion to the substrate is not sufficient, the covering level ofthe substrate is not complete, and the grain size is not homogeneous.Only the water solvent (FIG. 4—case D) gives the possibility ofobtaining both a high covering level of the CZTS film with largecrystalline grains and good adhesion on the molybdenum/glass substrate.

The present example shows that water is the preferred pure dispersionsolvent. Examples 3 and 4 show that the dispersion solvent ispreferentially a water-ethanol mixture, which is an abundant solvent,easy to use and non-toxic and which gives the possibility of making,after deposition by spraying followed by a crystallization heattreatment, continuous and dense (without any cracks or holes)crystalline CZTS layers with large grains, and adherent on themolybdenum substrate.

EXAMPLE 5 Preparation of an Sb₂S₃ Colloid

A sulfur precursor solution is first prepared by mixing 18 ml ofacetonitrile and 2 ml of water at room temperature, and then by pouringtherein 18 mg of NaSH powder (0.321 mmol) which spontaneously dissolves.As the NaSH is not or very little soluble in acetonitrile, dissolutionoccurs in the aqueous portion of the water/acetonitrile mixture.

An antimony metal precursor solution with a concentration of 10.7 mol/Lis then prepared by dissolving 4 mg (0.214 mmol) of SbCl₃ powder(Aldrich) in a 20 ml solution of pure acetonitrile. No hydrolysis of theSbCl₃ salt is noticed during this dissolution.

By pouring the sulfur precursor solution into the metal solution at roomtemperature, orange coloration is immediately observed, characteristicof the amorphous solid phase Sb₂S₃, resulting from spontaneous formationand within a few seconds, of a stable colloid. This colloid is difficultto centrifuge, which shows the great stability of the colloid, which isrelated to the small size/mass of the primary suspended nanoparticles.Indeed, an analysis by transmission microscopy (TEM) is then conducted:a copper grid with a carbon membrane is soaked for a few seconds in thecolloidal liquid so as to collect a small portion of it, and then it isleft to dry in ambient air. Observation under TEM indicates agglomeratedsmall primary particles, the individual size of which is of about 20nanometers. Elementary analysis TEM+EDX shows a majority composition ofSb₂S₃ as well as the presence of chlorinated impurities (of the order of1 atomic percent). No crystalline phase is identifiable by electrondiffraction under a TEM electron beam, which indicates that the solidparticles of the colloid consist of amorphous antimony sulfide Sb₂S₃.The colloidal synthesis by mixing both antimony/acetonitrile andsulfur/water solutions was then achieved according to the globalreaction: 2SbCl₃+3 NaSH<=>Sb₂S₃+3NaCl+3HCl.

By using two sulfur and metal solutions prepared under identicalconditions with those of the example above, the mixing order wasreversed by pouring the metal solution into the sulfur-containingsolution. There also, an orange coloration was immediately observed withspontaneous formation of an amorphous colloid Sb₂S₃ with acharacteristic orange color.

EXAMPLE 6 Preparation of Colloid SnS

A metal solution of tin 0.05 M is prepared in a glass bottle with acapacity of 50 ml, into which is first poured 348 mg of tin precursorpowder (SnCl₂, anhydrous, Fluka 96529) and then 36 ml of acetonitrilesolvent. Dissolution is facilitated at room temperature byultrasonication for a few minutes.

As in the examples above, a sulfur-containing 0.2 M aqueous solution isprepared by weighing 1.12 g of NaSH powder, and then by adding 100 ml ofdeionized and deoxygenated pure water in order to achieve theirspontaneous dissolution.

The colloidal synthesis is then achieved by mixing at room temperatureboth solutions, for example by pouring 9 ml of the sulfur-containing0.2M solution into 36 ml of 0.05 M metal tin solution. A black colloidis then formed spontaneously according to the global reaction:SnCl₂+NaSH<=>SnS+NaCl+HCl. This colloid is stable under ambientconditions for several days. The TEM observation of this colloid therebymade and without any other treatment (without any rinsing,centrifugation, re-dispersion etc.) is shown hereafter. In particular,elementary analysis TEM-EDX indicates that the composition is inmajority of tin sulfide, with presence of a chlorinated impurity, whichis a residual impurity of the reaction according to the followingcomposition (TEM EDX):

Sn S Cl C N O at. % 45.2 52.3 2.5 0.0 0.0 0.0 100

The primary particles formed are relatively small, with a characteristicsize of the order of 3 to 5 nm. This colloid may then be used in orderto be rinsed and then re-formulated as a slurry or an ink which may beused for deposition of thin layers.

EXAMPLE 7 Photovoltaic Device of the Thin Layer Type made with a CZTSLayer Annealed in a Nitrogen Atmosphere

A thin CZTS layer was prepared on a glass substrate probably molybdenum,annealed under an N2 atmosphere, like in Example 3.

On the crystallized continuous CZTS layer with large grains, a bufferlayer of approximately 50 nm of CdS was deposited, by deposition in achemical bath according to the customary procedure of the state of theart (see for example G. Hodes, Chemical Solution Deposition OfSemiconductor Films, ISBN 08247-0851-2, M. Dekker Inc.), by quenching ina mixture maintained at 60° C. of deionized water, of ammonia (NH₃, 4M),cadmium nitrate (Cd(NO₃)_(2, 4) mM) and of thio-urea (SC(NH₂)₂, 0.2M).After 10 minutes, the samples were rinsed in deionized water and thendried under nitrogen flow.

On this buffer layer, two optically transparent layers were depositedsuccessively by magnetron sputtering with the use of a commercialapparatus H2 from Intercovamex: A first insulating layer of about 50 nmof ZnO [135 W RF, 0.5 Pa of argon] followed by a conductive transparentlayer of about 250 nm of indium oxide doped with 10% by mass of tin(ITO) [70 W RF, 0.25 Pa of argon]. The square resistance of the obtainedITO layer is approximately 30 ohms per unit square.

Next, the substrate was divided into 16 electrically insulated cells,each with square dimensions 0.5 cm×0.5 cm. In order to collect thecurrent and measure the photovoltaic performance, a front face contactwas made with a small spot of 0.5 mm of silver deposited by drying alacquer loaded with silver, on the conductive ITO layer. The rearcontact was also directly taken on the molybdenum, at the edge of thesubstrate.

The photovoltaic yield (or photovoltaic efficiency) was computed fromthe current-voltage electric characteristics of the photovoltaic diodemeasured under light irradiation. The conversion yield is the percentageof the electric power delivered by the device at the maximum powerpoint, relatively to the power of the incident radiation: η=(electricpower at the maximum power point)/(power of the incident radiation).This photovoltaic efficiency was measured with an electric test benchand which uses a solar simulator delivering an irradiation of 1000 W/m²corresponding to the AM1.5G standard. The measurement bench wascalibrated according to the standard procedure on the basis of the knownphotocurrent of reference cells, as provided by different recognisedofficial institutes.

As illustrated in FIG. 5, the preliminary yields as described in thisexample, were of the order of 1%, the short-circuit currents were around8 mA/cm² and the open circuit voltages around V_(oc)=0.25V.

What is claimed is:
 1. A colloidal solution in a dispersion solventconsisting of: an aqueous or hydro-alcoholic colloidal solution ofamorphous nanoparticles of chalcogenide(s) of amorphous nanoparticles ofmetal chalcogenides of formula M-C wherein: M represents first metalsconsisting of Cu, Zn, and Sn, and C represents at least one chalcogenideelement selected from S and Se, comprising primary nanoparticles ofsizes of less than 30 nm, the alcohol of said solution, if any, being anon-toxic alcohol.
 2. The colloidal solution according to claim 1,wherein said colloidal solution consists in said nanoparticles dispersedin a dispersion solvent consisting of an hydro-alcoholic solution ofamorphous nanoparticles, said alcohol of said solution having a boilingtemperature below that of water.
 3. The colloidal solution according toclaim 1, wherein said particles consist of primary nanoparticles ofsizes of 3 to 20 nm.
 4. The colloidal solution according to claim 1,wherein said amorphous nanoparticles are amorphous nanoparticles ofCu₂ZnSnS₄.
 5. The colloidal solution according to claim 1, which isobtained by a method comprising the following successive steps beingperformed at a room temperature from 0° C. to 50° C., wherein: a) afirst solution of precursors of said first metals M is prepared in asolvent consisting of pure acetonitrile, or a mixture of acetonitrilewith water, and/or an alcohol other than methanol, and b) a secondaqueous or hydro-alcoholic solution of precursors of the chalcogenides Cconsisting of one or two chalcogenide salts of second metals, other thansaid first metals M, is prepared, the alcohol of said second solutionbeing an alcohol other than methanol, and c) both of said first andsecond solutions of precursors are mixed at atmospheric pressure, and atroom temperature until a crude colloidal solution is obtained, includinga solid portion comprising primary amorphous nanoparticles containingall of the first metals Cu, Zn, and Sn, with sizes of less than 30 nm,and a liquid supernatant, and d) the solid portion is separated fromsaid colloidal solution of step c), in order to obtain a solid residueafter removal of the liquid supernatant, and e) the solid residueobtained in step d) is rinsed by pouring onto it an aqueous orhydro-alcoholic solution in order to form a subsequent colloidalsolution including a solid portion and a liquid supernatant, the alcoholof said hydro-alcoholic colloidal solution being other than methanol,and f) the solid portion is again separated from said subsequentcolloidal solution of step e), in order to obtain, after removal of theliquid supernatant, a rinsed solid residue as a humid paste, and g) saidhumid paste of step f) is re-dispersed in a dispersion solventconsisting of an aqueous or hydro-alcoholic solution, the alcohol ofsaid hydro-alcoholic solution, if any, being a non-toxic alcohol, so asto obtain a dispersion of nanoparticles of chalcogenides of Cu, Zn, andSn.
 6. The colloidal solution according to claim 5, wherein M is aternary mixture of Cu, Zn, and Sn, and C is S, and, in step c),amorphous nanoparticles of Cu₂ZnSnS₄ are obtained.
 7. The colloidalsolution according to claim 5, wherein in said method, in step a), thesolvent is acetonitrile alone, in step b), the solvent is water alone,and in steps e) and g) said solvent consists of an hydro-alcoholicsolution, the alcohol of said hydro-alcoholic solution being a non-toxicalcohol having a boiling temperature below the boiling temperature ofwater.
 8. The colloidal solution according to claim 6, wherein in saidmethod: in step a), said precursors of said first metals are halides ofsaid first metals M, and in step b), said one or two chalcogenide saltsof said second metals are alkaline, or earth-alkaline metal salts. 9.The colloidal solution according to claim 8, wherein in said method: instep a), said first solution contains CuCl₂, ZnCl₂, and SnCl₄, and instep b), said chalcogenide salts consist of NaSH.
 10. A method formanufacturing a film of polycrystalline metal chalcogenide(s) with largecrystalline grains of sizes at least equal to half the thickness of saidfilm, by means of a colloidal solution according to claim 1, said filmbeing deposited on one or more layered material(s) forming a substrate,said metal chalcogenide being of formula M-C wherein: M represents Cu,Zn, and Sn, and C represents one or more chalcogenide elements, eitheridentical or different, selected from S and Se, wherein the followingsuccessive steps are carried out: 1) a layer of amorphous nanoparticlesof metal chalcogenide(s) is deposited on said substrate from saidaqueous, or hydro-alcoholic colloidal solution, and 2) heat treatment ofsaid layer of metal chalcogenide(s) is carried out at a temperature ofat least 300° C. in order to obtain densification of said layer of metalchalcogenide(s) and crystallization of the nanoparticles, over athickness from 0.2 to 5 microns (μm).
 11. The method according to claim10, wherein, in step 1), said aqueous or hydro-alcoholic colloidalsolution is sprayed with a carrier gas consisting of an oxygen-free gas,at atmospheric pressure and at a substrate temperature brought to atleast 100° C., in order to form on said substrate, a layer of saidcolloidal solution with a thickness from 0.5 to 15 μm, and, whereinsteps 1) and 2) are carried out in a vacuum chamber or filled with anoxygen-free gas. 5
 12. The method according to claim 10, wherein saidsubstrate is a substrate intended to be covered with a type psemi-conductor absorption layer in a solid photovoltaic device, whereinsaid substrate consists of a glass or steel layer covered with a rearcontact layer, consisting of a molybdenum layer, useful in a solidphotovoltaic device of the substrate type.
 13. The method according toclaim 10, wherein a film of crystallized metal chalcogenide(s) of Cu,Zn, and Sn with large crystalline grains with a size of at least halfthe thickness of the thickness of said film, continuously deposited onsaid substrate is obtained, said film having surface roughness with anarithmetic mean height of the peaks of Sa, according to the ISO 25178standard, of less than half of the thickness e of the film, for asurface area of at least 20×20 μm².
 14. A film of crystallized metalchalcogenide(s) of Cu, Zn, and Sn with large crystalline grains with asize of at least half the thickness of the thickness of said film,continuously deposited on a substrate obtained by the method accordingto claim 13 having surface roughness with an arithmetic mean height ofthe peaks of Sa, according to the ISO 25178 standard, of less than halfof the thickness e of the film, for a surface area of at least 20×20μm².
 15. The film according to claim 14, wherein the crystallized metalchalcogenides consist of Cu₂ZnSnS₄ in a Kesterite crystalline form, witha thickness from 0.2 to 5 μm.
 16. A photovoltaic device comprising anabsorption layer consisting of said film deposited on a substrateaccording to claim
 13. 17. The device according to claim 16, comprisingsuccessively stacked layers of: a substrate made of sodium-lime glass,covered with a thin conductive layer of molybdenum being used as a rearelectric contact layer, said film of an absorbing material, a bufferlayer made of a layer made on the basis of an n type semi-conductor, anda conductive transparent layer consisting of a first layer of a notdoped intrinsic ZnO layer, covered with a transparent conductive layermade of indium oxide doped with tin (ITO) or zinc oxide doped withaluminium (AZO), and a metal grid of a front face electric contactdeposited on said transparent layer.
 18. The device according to claim16, wherein said absorbing material essentially consists of Cu₂ZnSnS₄.19. The device according to claim 16, wherein the n type semi-conductoris selected from the group consisting of cadmium sulfide CdS, indiumsulfide In₂S₃, and an oxysulfide alloy.
 20. The device according toclaim 19, wherein the oxysulfide alloy is Zn(S, O, OH).